By Peter W. Hawkes (ed.)
ISBN-10: 0120147289
ISBN-13: 9780120147281
This sequence covers a variety of issues, stretching from the particle optics of accelerators, mass spectrometers, electron and ion microscopes, and of person elements of those tools to theoretical and functional features of contemporary electroinics. one other vast intterest is electronic photograph processing and development attractiveness, together with the units hired and the equipment constructed. Electron physics is interpreted very liberally and articles are frequently incorporated on fabrics of present curiosity in addition to at the units that hire them. the thing of the sequence is to supply articles which may evaluation a brand new or quickly constructing box, or may well conceal decades of study, therefore delivering a small monograph on a selected topic. "Advances in Electronics and Electron Physics" quantity 86 positive aspects articles at the following issues: GaAs semiconductor thoughts; photo processing; N-beam calculators; and electron optics.
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Additional info for Advances in Electronics and Electron Physics, Vol. 86
Sample text
Gate voltage for a 5 x 350pm ring-gate JFET. , 1990; Neudeck, 1991). Figure 29 shows drain current versus gate voltage for a 5 x 350pm ring-gate JFET, while Fig. 30 shows drain current in a 10 x 350pm ring-gate MESFET. At room temperature, the gate-to-drain leakage in the JFET is more than two orders of magnitude smaller than in the MESFET. Thus, one expects superior storage time performance from a JFET-based memory. , 1991a). (It is important in this procedure that the metal not be deposited in an electron-beam evaporator).
42. In this structure a GaAs quantum well, formed between two AlAs barriers, serves as a floating gate for an underlying field-effect transistor. Electrons are injected into the quantum well from the gate by a negative pulse. This injection is aided by grading the band-gap of the barrier layer between the gate and the quantum well. Once stored, the electrons cause a positive shift in the threshold voltage of the underlying transistor. This 50 JAMES A. COOPER, JR. ---. 3 N I b! E L rl 0 4 x 5 h Y v a ..
1. Steady-State Capacitance- Voltage Relationship At this point we wish to calculate the capacitance-voltage relation of the pnp structure shown in Fig. When a bias is applied across the pnp structure, negligible current will flow in steady state, since one of the pn junctions is reverse biased. Consequently, the voltage drop across the forward-biased junction is also negligible, and virtually all the applied voltage develops across the reverse-biased junction. Thus, the total capacitance of the structure is that of two capacitors in series, one at essentially zero bias and the other reverse biased by an amount V,.
Advances in Electronics and Electron Physics, Vol. 86 by Peter W. Hawkes (ed.)
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